Session number - IWTU8
Time: 3:40 - 5:20 PM
Design Technology Co-Optimization (DTCO) of RF Power Amplifier Designs with GaN Device Technology
GaN HEMTs are leading candidates for high frequency high power amplifiers for 5G/6G base stations. TCAD simulation helps GaN device developers optimize epitaxial structure and layout parameters to achieve transistor DC and small signal (Ft) targets. The TCAD simulation generates I-V, C-V, S-parameter curves and large signal power sweeps. ASM compact model parameters are extracted from the TCAD simulation data, from which the PA circuit design is optimized with HB load pull simulation. The device-level insights into nonlinearity physics are revealed by Fourier coefficients of solution variables.