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Traditionally Capacitance was the main extracted parasitic element and technology for capacitance extraction progressed rapidly. Resistance extraction was done primarily by rule-based technique since metal traces only supported 90 deg turns. With recent advancements in silicon process technology and 3DIC packaging, all angle and curved traces are possible. To support all angle trace resistance extraction mesh technique is required and for curved trace resistance extraction field solver is needed. In this video you will learn about different resistance extraction techniques supported by StarRC.