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Early litho pathfinding, process optimization and analysis
S-Litho represents advanced lithography simulation for semiconductor device manufacturing process development and optimization. It covers a wide range of applications in proximity printing, optical, immersion, extreme ultraviolet (EUV), and electron beam (e-beam) lithography. Process-limiting effects within the imaging system of an exposure tool can be thoroughly analyzed, taking the impact of mask and substrate topography on photoresist patterning into account. Interfacing S-Litho with Synopsys TCAD tools allows a seamless modeling of complex integration techniques such as double-patterning. The link between S-Litho and Synopsys Proteus mask synthesis applications accelerates the generation and validation of optical proximity correction (OPC) models and improves process robustness.
Key Benefits
Features
S-Litho
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S-Litho
S-Litho provides a comprehensive set of features to predict the outcome of a photolithographic process. Physics-based models enable high simulation accuracy. As a computational lithography tool, S-Litho accelerates process development and reduces cost by eliminating experiments.
Key features include:
- Wide range of lithographic techniques: Proximity printing, e-beam direct write, DUV projection lithography
- Resist modeling in three dimensions (3D)
- Resist model calibration environment
- Powerful customization through scripting
- Links to Synopsys’ Proteus and TCAD solutions
S-Litho EUV
S-Litho EUV enables process optimization and development for the most advanced nodes. It’s ready for all high-NA EUV specific simulation applications, allowing to start the development of mask synthesis solutions today, while the exposure tool hardware is still under development.
Key features include:
- Isomorphic and anamorphic imaging
- High speed mask 3D simulations,
- Multi-layer defect assessment
- Metal-Oxide resist and dry resist processing
- Stochastic models and defectivity studies