As transistor scaling reduces the area available for metal-semiconductor contacts, the impact of contact resistance on transistor performance increases. Therefore, the detailed modeling of metal-semiconductor contacts has become an essential component of transistor optimization.
Atomic-scale modeling of metal-semiconductor contacts in QuantumATK provides key insights on how to optimize contact resistance, including:
- how the atomic structure of the interface impacts the metal-semiconductor contact resistance,
- the intrinsic processes that limit the resistance of the contact,
- doping-dependence of contact resistance.
The nanoscale of today’s and future metal-semiconductor contacts render its experimental characterization challenging. The atomic-level modeling in QuantumATK provides the key benefit of a first-principles description to complement experimental characterization to guide transistor optimization.