There are a few memory technologies used in advanced-node SoC designs including SRAM, eFlash, eMRAM, PCRAM and ReRAM (Table 1). As Moore’s law continues, eFlash development is slowing down on advanced nodes and currently stopping at 28nm. The only way to utilize Flash is die stacking, or system-in-package (SiP), at 22nm and below. eMRAM is a promising candidate to replace SRAM and flash over PCRAM and ReRAM. When comparing eMRAM to SRAM, eMRAM provides smaller area, lower dynamic power, lower leakage, higher capacity, better radiation immunity, lower cost and is non-volatile. Comparing eMRAM to PCRAM and ReRAM, eMRAM has a simpler manufacturing process, longer endurance, and production-level yields. Compared to external flash, eMRAM has smaller form factor at the system level, higher performance, longer battery life, SRAM like interface, better user experience, shorter system design turnaround time (TAT), higher yield, predictable product cost and stable supply to avoid flash shortages due to the nature of flash market. Compared to embedded flash, eMRAM enables designs to align with Moore’s law in advanced nodes from 22nm to FinFET processes.