Curvilinear Mask Patterning for Maximizing Lithography Entitlement

Curvilinear Mask Patterning is a cutting-edge lithography technique that promises to maximize lithography entitlement by addressing complex design challenges and critical yield limiters. However, its widespread deployment has been limited by significant computational challenges. This paper includes practical solutions to overcome the computational challenges associated with this technique, as well as the difficulties of manufacturing curvilinear masks. Download today, and gain valuable insights into optimizing your lithography process with curvilinear mask patterning, enabling you to stay ahead of the competition in the rapidly evolving semiconductor industry. 

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