EDA
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Electrostatic Discharge Signoff for IP Blocks, Full-Chip Layout, and Multi-Die
Synopsys PathFinder-SC is high-capacity electrostatic discharge (ESD) verification software designed to analyze robust ESD integrity. It enables shift-left early analysis of electrical overstress in the design stage, before LVS. Its ultra-high capacity can verify the integrity of full chip designs and also mutli-die 2.5D/3D-ICs. Built on cloud-optimized elastic compute infrastructure, PathFinder-SC is foundry-certified to deliver fast, silicon-correlated analysis and debugging for CDM, HBM, and other ESD events, ensuring reliable protection for advanced semiconductor designs and multi-die advanced packaging.
Key Benefits
Features
Full-Chip and Multi-Die ESD Signoff
PathFinder-SC performs single-pass ESD analysis across hundreds of domains and millions of instances at the design stage before LVS. It supports CDM and HBM event coverage and checks resistance and current density for reliable signoff of single chips and 2.5D/3D-IC multi-die assemblies.
Silicon-Correlated Accuracy
Transient simulations using SPICE models and transmission line pulse (TLP) curves at picosecond resolution deliver silicon-correlated results. The simulation engine handles snap-back behavior and accurately models ESD device triggering for foundry-certified precision.
High Capacity and Performance
PathFinder-SC can analyze over 100 million instances and hundreds of power, ground, and signal nets in one run. Full-chip simulations complete in hours, supported by elastic cloud compute for ultra-large designs.
Layout-Based Root Cause Detection
The integrated GUI enables rapid identification of layout issues and connectivity imbalances, such as missing clamp connections or improper bump-to-clamp paths. Pass/fail reports are cross-probed directly to the layout for actionable insights.
Single-Pass Simulation and Results Analysis
The end-to-end simulation engine reads industry-standard formats, sets up ESD rules, performs extraction, and delivers analysis and optimization feedback in a single tool, reducing errors and speeding up time to results.
Chip ESD Compact Model (CECM) for Chip-Package-Board Verification
Built-in modeling creates accurate ESD compact models at standard cell, IP, and full-chip levels. CECM includes PG models, clamp devices, and optional current signatures for thorough reliability assessment.
Integrated Platform and Flow Support
PathFinder-SC integrates with RedHawk-SC and Totem, supports GDS and digital flows, and handles snap-back ESD scenarios. The platform streamlines signoff for both library and SoC-level analysis.
Cloud-Native Elastic Compute Architecture
Built on SeaScape big data analytics, PathFinder-SC scales across thousands of CPU cores, delivering near-linear performance and handling the largest designs with low memory requirements.
Technical Capabilities
Synopsys PathFinder-SC provides comprehensive ESD simulation, root cause analysis, and optimization for IP, full-chip, and multi-die designs. It covers CDM and HBM events, performs resistance and current density checks, and is certified for signoff at 2nm by major foundries. The tool handles hundreds of domains and more than 100 million instances per simulation, leverages cloud-native elastic compute, and delivers layout-based debugging and compact ESD modeling for robust reliability.
FAQ
PathFinder-SC covers both charged-device model (CDM) and human body model (HBM) ESD events for comprehensive analysis.
It uses transient SPICE simulations and TLP curve modeling, certified for signoff by major foundries and validated by customers.
Yes, its cloud-native elastic compute architecture enables analysis of more than 100 million instances in a single simulation.
Yes, PathFinder can extract and simulate an entire multi-die ESD network spanning multiple die.
PathFinder-SC offers a GUI for direct cross-probing of pass/fail results to the layout, simplifying root cause detection and optimization.
It integrates with RedHawk-SC and Totem and supports industry-standard design formats for seamless workflow adoption.