Wide Band Gap (SiC) MOSFET Modeling for Automotive Applications Using Saber and MAST

Schaeffler presents a study highlighting the pivotal role of Silicon Carbide (SiC), a prominent Wide Band Gap semiconductor, in enhancing the performance of automotive power electronics using MOSFETs. SiC's exceptional thermal conductivity, high voltage capacity, and reduced energy losses are essential for developing efficient and reliable automotive systems. Accurate modeling is vital for navigating complex and variable conditions in automotive environments.

To address the increasing need for detailed models and rapid simulations, this approach employs both the Saber Power MOSFET Tool and MAST Language for custom modeling. These tools enhance continuous nonlinear estimations and reduce discrete event occurrences, enabling optimized operations in key regions.

This strategy not only boosts modeling accuracy and efficiency under challenging conditions but also significantly advances automotive designs utilizing SiC technology, fostering the creation of safer and more efficient electric vehicles.