Power Integrity for Multi-Die Designs: Getting EMIR Right Across the Full Stack

In a multi-die design, power travels from the C4 bumps through the interposer, TSVs, and micro-bumps before it reaches circuitry on the top die. Every interface along that path adds resistance and reshapes current distribution, so analyzing one die at a time misses IR drop and electromigration risks that only appear across the full stack. This white paper explains the EMIR failure modes specific to multi-die designs, how thermal effects interact with EM, and why late discovery forces costly PDN changes. It also outlines a step-by-step methodology for analyzing power integrity concurrently across die, interposer, and package, starting at prototyping.

What You’ll Learn

• Why single-die EMIR analysis misses full-stack risks 
• Common multi-die failure modes, from TSVs to RDL electromigration 
• How thermal coupling and self-heating affect EM
• A step-by-step EMIR methodology from prototyping to signoff