Synopsys MRAM and RRAM IP

Synopsys Magneto-Resistive Random Access Memory (MRAM) IP is designed to meet the highest standards of reliability and performance, particularly in demanding environments. Originally developed for aerospace applications, MRAM leverages an adjustable magnetic layer to maximize storage density while offering exceptional power and performance characteristics. This makes it ideal for applications that require the highest levels of data integrity, such as modern vehicles needing over-the-air (OTA) software updates and advanced MCUs for AI accelerators. The Synopsys MRAM Compiler is a comprehensive, configurable IP solution that enables designers to achieve higher memory capacity (2Mb to 128Mb), with a smaller footprint and lower power consumption compared to other non-volatile options.

The Synopsys MRAM IP solution enables designers to quickly embed secure, radiation-tolerant on-chip persistent memory in SoCs at 22nm and below. This solution addresses the growing demand for cost-effective, efficient memory capacity in high-reliability AI-enabled applications such as automotive, aerospace and IoT.

Synopsys MRAM is a complete IP solution that includes embedded voltage circuitry, built-in self-test (BIST) and repair, and error correction code (ECC). This allows faster SoC integration, accelerating time to market.

Enhanced for reliability and endurance, Synopsys MRAM provides differentiated features like read-modify-write, write-verify-write, and programmable reference voltage generation. We designed it for automotive applications supporting 150ºC junction temperature.

Additionally, Synopsys offers a variety of solutions to help accelerate the integration of the high-quality MRAM, including Synopsys Self-Test and Repair (STAR) Memory System™, Synopsys STAR ECC Compiler IP, and Synopsys Silicon Lifecycle Management Family.

On the other hand, Synopsys' Resistive Random Access Memory (RRAM) IP addresses the need for cost-effective, high-density non-volatile memory solutions. Using a dielectric layer to store data, RRAM is not sensitive to magnetic fields, making it suitable for environments with benign conditions. Its low cost, energy efficiency, and scalability make RRAM an excellent choice for IoT devices, wearables, in-room sensors, and other applications where power and space efficiency are crucial. Synopsys' IP-based compiler solutions further enhance RRAM's integration and scalability, enabling developers to build a wide range of memory macros tailored to their specific needs. By supporting advanced processes, Synopsys is driving the adoption of RRAM in various applications, ensuring that it meets the growing demand for efficient, scalable, and high-density memory solutions.

eMRAM
Figure 1: Configurable MRAM IP provides flexibility for multiple word widths, aspect ratios, and floorplan optimizations



Download Synopsys MRAM Compiler IP Datasheet

 

Highlights
Products
Downloads and Documentation
  • Configurable 2Mb to 128Mb memory compiler for high-reliability applications 
  • Smaller area and lower power compared to other high-capacity persistent memory options
  • Complete solution includes embedded voltage circuitry, built-in self-test (BIST) and repair, and error correction code (ECC) for faster SoC integration
  • Support up to 2-bit Correct+3-bit Detect ECC
  • BIST support through Star Memory System (SMS)
  • Standard embedded memory interface simplifies system architecture
  • Up to 100K write cycle endurance
  • Automotive ready
  • Data securely stored and resistant to reverse engineering
  • Utilizes radiation-tolerant MRAM bits for high-reliability applications
  • Wide operating temperature range: -40°C to 150°C  
  • Over 45% area reduction compared to standard ultra-high-density SRAMs
Single Port High Density eMRAM 128M Sync Compiler For TSMC 16nm FFCSTARs Subscribe
Single Port High Density eMRAM 128M Sync Compiler, TSMC 22nm ULL High-K Metal Gate P-Optional Vt/Cell Std Vt ProcessSTARs Subscribe
Description: Single Port High Density eMRAM 128M Sync Compiler For TSMC 16nm FFC
Name: dwc_comp_ts16n0c41p11saemr128s
Version: a02
ECCN: 3E991/NLR
STARs: Open and/or Closed STARs
myDesignWare: Subscribe for Notifications
Product Type: DesignWare Embedded Memory IP
Documentation:
Download: v-comp_ts16n0c41p11saemr128s
Product Code: I536-0
Description: Single Port High Density eMRAM 128M Sync Compiler, TSMC 22nm ULL High-K Metal Gate P-Optional Vt/Cell Std Vt Process
Name: dwc_comp_ts22nlh41p11saemr128s
Version: a02
ECCN: 3E991/NLR
STARs: Open and/or Closed STARs
myDesignWare: Subscribe for Notifications
Product Type: DesignWare Embedded Memory IP
Documentation:
Download: v-comp_ts22nlh41p11saemr128s
Product Code: I286-0