Ultra Low Leakage Libraries, built with thick IO oxide, provide up to 100X leakage reduction and are used for implementing always-on blocks of logic that can be directly connected to energy sources such as LiON batteries for high voltage operation. The libraries come with level shifters to interface to standard voltage domain logic blocks and memories.

Figure 1: Long Channels and IO Oxide for Lowest Leakage

Figure 2: Always-on ULL Control Block Directly Connected to Battery or Switching Regulator for LDO Control

Highlights

Features

Easy to Use

Standard synthesis, place and route design flow
Connect directly to LiON cells without voltage regulator power drain
Build as separate block for pitch matching
Characterized with same VTs, PVTs as base libraries
Include level shifters to other standard voltage domains

Cost Effective

Include always-on wakeup blocks and power management on same die
Uses standard IO oxide

Applications

Lowest leakage for always-on wakeup circuits with high voltage capability for direct connect to LiON or other batteries
Use without regulators to support operation from 0.9V to 3.6V
Wake up state machines – turn on LDOs
Implement LiON with charging algorithms