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Synopsys TCAD Newsletter December 2006

The lead article examines full process flows that include lithography and topography simulations. There is an introduction to Fammos for interconnect stress and reliability analysis, as well as articles describing the design and optimization of double-halo 45-nm CMOS technology, the simulation of nanocrystal nonvolatile flash memory, and the enhancements to Raphael™ in Version Z-2006.12.

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