Thursday, March 21, 11:30 – 2:00 pm, Technical Session D12.6
Evaluation of an Automated Modeling Tool Applied to New 600 V, 2 a Vertical GaN Transistors
The Power MOSFET Tool through Synopsys® Saber® can estimate static and dynamic behaviors of devices given measured static characteristic curves even if a datasheet is unavailable or advanced device properties are less understood. This paper presents a model of a new vertical GaN on GaN transistor. The model matches the experimental static results within 8.42% error and predicts the 8.48 ns turn-on and 30.2 turn-off time within a couple nanoseconds. With optimization of the parasitic elements in the circuit, the model matches the rise and fall rates as well as the frequency and magnitude of the harmonic ringing.
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