◆ 開催日時　両日とも同一の内容です

　 1回目: 2023年1月31日 (火) 14:30 - 16:30

　 2回目: 2023年2月2日   (木) 14:30 - 16:30　

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◆ 申込締切

　 2023年1月30日 (月)

◆ お申込み　下記ボタンよりご希望の日付を選択の上、お申込みください

　  1/31(火)開催 　　　 2/2(木)開催 

◆ アジェンダ

14:30 　Introduction

14:35 　Sentaurus Workbench, Sentaurus Calibration Workbench, Optimization Framework, Sentaurus Visual update 

15:35 　Q & A

15:40 　Sentaurus Device, Sentaurus Process, Sentaurus Interconnect update

16:20 　Q & A

16:30 　Session Close

*お時間は前後する場合がございます。

◆Sentaurus TCAD U-2022.12の主な新機能

Sentaurus Workbench

•  Preprocessor Performance Improvements
•  Preprocessor Performance and Cyclic Dependency Checks
•  Preprocessor Performance and Tcl Command Blocks
•  Enhanced Exporting and Importing of Projects
•  Removing Multiple Parameter Values
•  Adding Experiments in a Flow With Locked Tools
•  Update to Remove Parameter Value Dialog Box
•  Background Project Operations
•  Exporting and Importing Projects
•  Single Tool Icon for Layout Editor Tools

Sentaurus Calibration Workbench

•  Overview
•  Sentaurus Calibration Workbench GUI
•  XY Profile Targets/Miscellaneous
•  Sensitivity Analysis
•  Enhancements to Calibration Strategies
•  No Support for Projects Based on Sentaurus Workbench Projects With Hierarchical Organization

Optimization Framework

•  New Sentaurus Workbench DoE Options and API Change
•  Parallel (Batch) Bayesian Optimization
  
•  Additional Method for Problems With Categorical Parameters
•  New Way to Set Optimization Conditions
•  Enhancement of Acquisition Functions
•  Unique Identifier for Optimization Targets
•  Custom Stopping Criteria

Sentaurus Visual

•  On-Demand Field Loading for Analysis
•  Support for +Inf, -Inf, and None in get_variable_data() Command
•  Extended Support for Custom Buttons Toolbar
•  The set_curve_prop() Command No Longer Requires plot Option
•  Improved Variable Parsing in Tcl Mode
•  Copying and Pasting From Console Applies Formatting
•  Cutplane Manipulation
•  New remove_fields Command
•  Scriptable Plot Lighting
•  Change to Location of Curve Properties
•  Multiple-Line Titles in XY Plots
•  Improved Naming of Cutlines and Cutplanes
•  Displaying Cut Coordinate in Plot Title
•  Increased Maximum Resolution for Field Contours
•  New Settings for 1D and 2D Axis Inversion

Sentaurus Device

•  Optimization for Resistive Contacts Using Both Resist and DistResist
•  Additional Plot Features for Saddle Point Analysis in CIS Devices
•  Carrier Path Plotting
•  Surface Recombination as an Interface Model
•  DopingWells in CurrentPlot and Quasistationary Goal Command
•  Netlist Parsing of Complex Expressions
•  Better Parsing of Subcircuits Containing F-, H-, W-, and K-Elements

Sentaurus Process, Advanced Calibration for Process Simulation

•  Surface Noise Reduction Technique for Monte Carlo Implantation
•  Gaussian Distribution for Beam Divergence Angle in Monte Carlo Implantation
•  Defining Mask-Based Boxes
•  Allow emulated.oed.box to be mask driven 
•  Mask Option Enabled for 2D Trapezoidal Etch
•  Improved Calibration of Sentaurus MC for H Implantation Into Silicon: Monte Carlo Model Parameters

Sentaurus Process / Sentaurus Interconnect共通

•  Applying Interface Refinement to Only One Side
•  Emulation of Periodic Boundary Condition
•  Enhancement to Matrix Printing
•  Mechanics Deformation Scaling and Delooping
•  Defining Boundary Condition to Top of Bounding Box of Bulk Materials
•  Adding Intrinsic Stress to Existing Stress Field
•  Support for Adaptive Meshing in load Command
•  Enhanced Region-Merging Functionality With mgoals Command
•  Enhancement to Distributed Load

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*プログラムは予告なく変更される場合がございます。ご了承ください。