◆ 開催日時 両日とも同一内容です。
1回目: 2022年4月12日 (火) 13:30 - 15:30 お申込みは終了いたしました
2回目: 2022年4月14日 (木) 13:30 - 15:30 お申込みは終了いたしました
#[ZOOM Webinar] を使ったオンライン配信を予定しております。
◆ 対象のお客様
Sentaurus TCADおよび関連製品の保守契約を締結いただいているお客様
◆ アジェンダ
13:30 Introduction
13:35 Sentaurus Workbench, Sentaurus Visual update
14:25 Q & A
14:30 Sentaurus Device, Sentaurus Process, Sentaurus Interconnect update
15:20 Q & A
15:30 Session Close
◆Sentaurus TCAD T-2022.03の主な新機能
Sentaurus Workbench
- SWB Performance Challenges
- Parallel S-Visual Jobs
- Parallel Python Jobs
- Support for S-Visual Python Mode
- Command-Line Improvement of gsub
- Legacy Optimization Is No Longer Supported
Sentaurus Visual
- Polyhedron Domain for extract_path Command
- Polygonal Domain for Field Integration
- New Tcl or Python Console
- Support for New TDR File Version for Fast Loading of Mixed-Element Data Structures
- Showing Region or Material Names in 3D Plots
- Linking 1D and 2D Plots
- Multiple Rulers
- Blocking Specific Interface Fields From Loading
- Visualizing Point Boundary Conditions
- Improved Rendering Performance for 2D and 3D Plots
- XY Plots of Carrier
- Automatically Reloading 1D Datasets
- Automatic Detection of Tcl or Python Scripts on Command Line
- Improvements to Name Filtering
- Precision Formatting for Probe Results
- Multithreaded Algorithms
Sentaurus Device
- Unusual Cooling at Heterointerfaces
- Trap Concentrations in TDR Files
- Automatic Saving of Trapped Charge Dataset
- InterfaceCharge Mobility Model Enhancements
- Variable Range Hopping Transport Mobility
- Box Method: New Discretization at Interfaces
- All Specified Points Are Saved by the Plot Statement
- Tracking Doping Wells Through a Periodic Boundary for CurrentPlot Parameter Extraction
- Compilers for CMI and PMI
- Corrected Integrated Dose of Gamma Radiation for Short Time Interval
- Change in Default Parameters for AlGaN
Sentaurus Process / Sentaurus Interconnect共通
- Generating Tapered Photoresist Shapes Using photo Command
- Replace Functionality for Box-Type Contacts
- Read and Save Only Specified Data Fields
- Exit Option If Layer Is Missing With icwb.create.mask Command
- Retrieving Segments Along Z-Direction
- Visualizing Simulation Statistics (SimStats) in Sentaurus Workbench
- Enhancement to the usage of the number of threads
Sentaurus Process / Advanced Calibration for Process Simulation
- Extended Energy Range of Nuclear Scattering Tables for Universal.
- Smooth Transition From Universal Potential to Coulombic Potential.
- Sentaurus MC for B and P High-Energy Implantation Into Silicon
- Sentaurus MC for Al, B, N, and P High-Energy Implantations Into 4H-SiC
- Local Debye Temperature Model
- Correction of Oxidation Parameters for N2O Atmosphere
- Loading External Profile Using implant Command with load.mc
Sentaurus Interconnect
- Axisymmetric Mechanics Simulations for Cylindrically Symmetric 3D Structures
- Temperature-Dependent Coefficients of Thermal Expansion and Poisson Ratio for Four-Parameter Orthotropic Elasticity
- Precision Control for Extreme Output of stressdata Command
Sentaurus Structure Editor
- Updated sdedr:define-submesh Scheme Extension
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*プログラムは予告なく変更される場合がありますことをご了承ください。