Synopsys TCAD Newsletter September 2009

This edition presents two articles. The first article examines the manufacturing, reliability, and performance analysis of 3D integration structures using through-silicon vias (TSVs), with the simulations performed using Fammos TX. The second article presents the simulation of GaAs-based heterojunction bipolar transistors (HBTs) and pseudomorphic high electron mobility transistors (PHEMTs).

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