This edition reports on the use of TCAD Sentaurus for modeling two wide-bandgap power devices. The first article discusses the simulation of a normally off p-gate GaN HEMT, and the second article discusses the simulation of a SiC IGBT in Sentaurus Device.
Please fill out the registration form to download a PDF of this TCAD Newsletter issue.
Please register with your official email ID (company or university). Other commercial email IDs (yahoo, gmail, etc.) will not be accepted.