Synopsys TCAD Newsletter June 2010

This issue has a special focus on power device technologies in view of the 2010 International Symposium on Power Semiconductor Devices and ICs (ISPSD). Simulations focus on silicon-based devices and on the new areas opened up by silicon carbide (SiC) and gallium nitride (GaN). In addition, there is a concise article on a new oxidation feature in Sentaurus Process Kinetic Monte Carlo.

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