Synopsys TCAD Newsletter December 2012

This is the IEDM 2012 edition of the TCAD News. This year marks a new chapter of CMOS innovation with the production release of 22nm FinFET technology to the market, and the semiconductor industry representatives gathering at IEDM will have much to be excited about advancing the FinFET technology below 10nm. Memory technologies are also evolving rapidly, with 3D NAND providing a near term pathway for extending the scaling of Flash technology, and new architectures such as spintransfer torque and resistive RAM undergoing intensive research and development.

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