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CMOS Devices
Sentaurus Technology Template: CMOS Processing
The process flow represents a generic 90 nm technology node and is intended to serve as a convenient starting point for any deep submicron CMOS simulation project.

Sentaurus Technology Template: CMOS Characterization
This Sentaurus TCAD simulation project provides a template setup for farsubmicron CMOS device characterization. IdVgs curves for a low drain bias and high drain bias are simulated for NMOS and PMOS structures with various gate lengths.

Advanced Examples (2D)
Simulation of CMOS Device Using Selective Epitaxial Growth Isolation and Hybrid Orientation Technique
Compared to (100) substrates the hole mobility is much higher in MOSFETs fabricated on (110) or (111) substrates with conventional SiO2, as the highest piezoresistance coefficient is obtained on the (110) surface under compressive stress.

Sentaurus Process Simulation of a 30 nm Gate-length NMOS Transistor with Hybrid Continuum and Atomistic Diffusions
This application example shows the process simulation of a 30-nm gate-length NMOS flow in Sentaurus Process using a combined approach of both continuum (five-stream) and atomistic (kinetic Monte Carlo) diffusions.

Simulation of Scanning Laser Annealing in Sentaurus Process
Shallow junctions with low sheet resistance are required for future generation short channel devices.

Advanced Examples (3D)
Process and Device Simulations of Trench Capacitor Embedded 70 nm DRAM
This application note showcases the TCAD Sentaurus 3D simulation capabilites for a trench capacitor embedded 3D DRAM cell.

Three-dimensional Simulations of Twin Silicon Nanowire NMOS Transistor
Modern semiconductor industry is facing numerous challenges as the next generation of devices are developed and manufactured.

Advanced Examples
Simulation of Current Filament During Electrostatic Discharge Pulse
This project demonstrates a transmission line pulse (TLP) simulation of a three-dimensional bipolar structure.

Bipolar Technologies
Sentaurus Technology Template: SiGe HBT Processing
Synopsys TCAD offers an extensive array of physical models to simulate silicon-germanium devices at both process and device simulation levels, including extraction of key device performance parameters.

Sentaurus Technology Template: Characterization of Bipolar Transistors
This Sentaurus TCAD simulation project provides a template setup for the characterization of bipolar transistors.

Power Devices
Simulation of 4H-SiC Vertical Junction FET in Sentaurus Device
Silicon carbide (SiC) has long been recognized as a superior semiconductor for high-power and high-temperature applications in view of its high breakdown electric field and excellent thermal conductivity. Since the pioneering work of Tairov and Tsvetkov who developed the modified seed sublimation growth process that spearheaded today's SiC substrate technology, the industry has improved steadily the quality, size, and cost of SiC substrates, all of which are key manufacturability considerations in any semiconductor technology.

Sentaurus Technology Template: LDMOS Processing
This Sentaurus TCAD simulation project provides a template setup for laterally diffused MOS (LDMOS) process simulations.

Sentaurus Technology Template: IGBT Characterization
This Sentaurus TCAD simulation project provides a template setup for IGBT device characterization.

Sentaurus Technology Template: SiC Schottky Diode
This Sentaurus TCAD simulation project provides a template setup for the simulation of silicon-carbide devices.

Sentaurus Technology Template: Light-Triggered Thyristor
This Sentaurus TCAD project simulates the time-dependent switching characteristics of a light-triggered thyristor.

Hetero Structure Devices
Sentaurus Technology Template: GaN HFET
This Sentaurus TCAD project provides a template setup for the simulation of DC characteristics of GaN HFET devices.

Sentaurus Technology Template: DC and RF Characterization of HEMTs
The purpose of this Sentaurus TCAD simulation project is to provide a template setup for the DC and RF characterization of high electron mobility transistors (HEMTs).

Memory Devices
Sentaurus Technology Template: SONOS Read/Write Operation
This Sentaurus TCAD project provides a template for the simulation of the read/ write operation and the charge retention of a silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory device.

Simulation of Planar Solar Cells with Transfer Matrix Method
This template demonstrates the use of the transfer matrix method (TMM) of TCAD Sentaurus for the calculation of solar cell characteristics: reflectance and transmittance spectra, quantum efficiency, and I-V curves.