Sentaurus Process Simulation of a 30-nm Gate-Length NMOS Transistor with Hybrid Continuum and Atomistic Diffusions

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This application example shows the process simulation of a 30-nm gate-length NMOS flow in Sentaurus Process using a combined approach of both continuum (five-stream) and atomistic (kinetic Monte Carlo) diffusions. Kinetic Monte Carlo diffusion with Monte Carlo implant is used to simulate part of the flow, including the halo and extension implant, the source/drain implant, and the final rapid thermal annealing. The rest of the flow, which includes the channel implant and diffusion, the poly reoxidation, and the final metallization, is simulated using continuum diffusion with analytic implant.

Close-up of the KMC structure with color-coded species after halo, extension, and source/drain implants (before RTA): blue indicates location of dopants and dopant-defect pairs, and green indicates location of point defects (interstitials and vacancies) in amorphous pockets. Part of the source/drain region has been amorphized by the high-dose source/drain implant. The remaining amorphous pockets after crystal regrowth exist mainly in the areas beyond the amorphous-crystalline boundary.

Close-up of the KMC structure following a relatively long RTA: blue indicates location of dopants (B and As) and dopant-defect pairs, cyan indicates location of dopant-defect clusters (B_nI_m and As_nV_m), green indicates location of point defects in amorphous pockets, and red indicates location of interstitials in both {311} clusters and dislocation loops

Close-up of the KMC structure at end of RTA: blue indicates location of dopants (B and As) and dopant-defect pairs, and cyan indicates location of dopant-defect clusters (B_nI_m and As_nV_m)

Device structure showing continuum data field for boron (left) and arsenic (right) at end of RTA. The continuum fields are generated based on the discrete dopant and defect locations in the last KMC structure.