Simulation of NMOSFET Degradation Kinetics with TCAD Sentaurus

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Trap formation kinetics in the channel of an NMOSFET is simulated in this TCAD Sentaurus project. The traps are generated due to the breaking of Si-H bonds. The activation energy of the process is assumed to be dependent on the density of hydrogen and is affected by the electric field and the hot-carrier current. Repassivation of silicon dangling bonds by the free hydrogen as well as diffusion of hydrogen into the SiO2 barrier are also taken into account in the model. Time dependence of the trap concentration at the Si-SiO2 interface is calculated for various stress conditions using Sentaurus Device. The model is calibrated to match published experimental findings on degradation kinetics, and this template represents a setup similar to the one used for such a calibration.

Evolution of trap concentration in time, for different stress conditions as given in the table below.

Drain current I_d versus gate voltage Vgs for the drain bias V_ds = 50 mV, before (black dots) and after (solid lines, color code is the same as in preceding figure) the degradation simulation

Please see Simulation of PMOSFET Degradation Kinetics with TCAD Sentaurus