Sentaurus Technology Template: Simulation of a GaN Light-Emitting Diode

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This Sentaurus TCAD template provides an example of a GaN light-emitting diode (LED) simulation. Two experiments for different device configurations are considered. Scheme functions are used to create the layered multimaterial LED structure. The simulation uses a dual-grid approach with two dedicated meshes used for electrical and optical simulation. Raytracing is used for the optical simulation. Standard optical and electric characteristics of the devices are obtained and visualized.

Electrical structure (left) and optical structure (right) Figure 2 Same as Figure 1, but magnification of active region; green represents quantum-well layers.

Same as previous figure, but magnification of active region; green represents quantum-well layers.

Spontaneous emission spectrum for the LED with (blue) and without (red) pyramidal structure at the bottom.

Drive voltage and power versus electrical current; the characteristics do not depend on the bottom width of the device

The simulation project is part of the Sentaurus TCAD distribution at:

../Example_Library/Opto/LED_GaN