Sentaurus Technology Template: GaN HFET

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This Sentaurus TCAD project provides a template setup for the simulation of DC characteristics of GaN HFET devices. Special attention is given to the automatic assignment of polarization charges at interfaces where polarization vectors experience large divergence. Examples of bulk and interface trap placement are given and proper models are selected for the simulation of III-nitride devices. Changes to the numeric accuracy settings are required to simulate large band-gap materials such as GaN and AlGaN. An I_dV_ds curve for V_d = 0 V and an I_dV_ds curve for V_d = 10 V are simulated.

Cross section of simulated device structure.

Simulated I_d versus V_gs curve for V_ds = 10 V

The simulation project is part of the Sentaurus TCAD distribution at:

../Example_Library/Hetero/GaN_HFET_dc