Join our FREE TCAD Webcasts to discover the power of the Synopsys TCAD solutions. Learn how Synopsys’ TCAD tools can help you achieve your technology development and design projects. Each webcast is 45 minutes of presentation and examples, followed by 15 minutes of Q&A.

Upcoming Topics:
Modeling Non-volatile Memory Technologies with Sentaurus TCAD
Thursday, May 29: 8:30 AM PDT/11:30 AM EDT/5:30 PM CEST
or
Thursday, May 29: 5:00 PM PDT
Friday, May 30: 8:00 AM PRC/Taiwan; 9:00 AM Japan/ROK

Archived Recordings::
January 2008:
Process and Stress Simulation for BEoL Reliability and Mobility Enhancement
February 2008:
Gallium Nitride HFETs: Physical Models and Simulations for RF and Power Applications
March 2008:
Electromagnetic Simulation of Image Sensors: From Design to Manufacturability
April 2008:
Resist Modeling with Sentaurus Lithography

Modeling Non-volatile Memory Technologies with Sentaurus TCAD

Overview
The spread of non-volatile memory devices has been phenomenal in recent years, and is fast replacing hard drives in terms of memory capacity and challenging DRAMs high speed capability. A new generation of non-volatile memory devices have kept scientists and designers busy researching and optimizing designs like SONOS memory, new materials like chalcogenide (GST) for Phase Change Memory, or means to pump charge into Nano Crystals to store information.

This webcast will present the capabilities of Synopsys’ Sentaurus TCAD tools for simulation of non-volatile memory devices including conventional Flash Memory, SONOS, Phase Change Memory (PCM), and Nano Crystal Memory, and discuss the methodology of simulating each. Important aspects such as creating the device structure and generating relevant electrical characteristics will be presented, along with discussions on proper choice of physical models to capture the effects of tunneling charge carriers, trapping mechanisms and so on. Designers new to TCAD methodology for non-volatile memory can benefit by learning the concept of virtual designs as a means of saving manufacturing costs. Experienced TCAD users will see new physical models for simulation of their technologies. Questions will be taken during the Q&A session at the conclusion of the presentation.

Who Should Attend?
TCAD engineers, device engineers, technology development engineers and managers involved in design and manufacture of non-volatile memory devices.

* Note: We are trying to determine the best time for future webcasts. Please register for one of the two times listed above. We will select the time that the majority registers for. We will notify you of the final timing one week prior to the webcast. If the selected time does not work for you, the webcast will be recorded and available for later viewing. We will send an email to all registrants with the recording link.