This edition of TCAD News is dedicated entirely to the new features and enhancements in the F-2011.09 release of TCAD Sentaurus which supports the latest processes (plasma implantation, silicon stress and orientation-dependent mobility), modeling 3D structures (shapes library, crystallographic etch and deposition, line-edge roughness, Sentaurus Topography 3D interface), and simulating device variability with the Impedance Field Method.
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