HOME    TOOLS    TCAD    NEWSLETTERS

Synopsys TCAD Newsletter June 2010

This issue has a special focus on power device technologies in view of the 2010 International Symposium on Power Semiconductor Devices and ICs (ISPSD). Simulations focus on silicon-based devices and on the new areas opened up by silicon carbide (SiC) and gallium nitride (GaN). In addition, there is a concise article on a new oxidation feature in Sentaurus Process Kinetic Monte Carlo.

Please fill out the registration form to download a PDF of this TCAD Newsletter issue.

Please register with your official email ID (company or university). Other commercial email IDs (yahoo, gmail, etc.) will not be accepted.

Required Required Fields

Business Email:Required
First Name:Required
Last Name:Required
Phone:Optional
Job Title:Required
Company:Required
Division:Optional
Country:Required


(requires browser cookies to be enabled)