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Synopsys TCAD Newsletter December 2011

In this special 2011 IEDM edition of TCAD News, we present two articles which are highly relevant to advanced logic and memory technologies. The first article discusses a recently developed Impedance Field Methodology (IFM) for analyzing the impact of random variability on device performance. The second article covers the 3-D simulation of FinFET devices, including the analysis of doping and stress proximity effects.

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