This issue focuses on two topics of concern for current and future development of CMOS devices: the simulation of random dopant fluctuation effects in TCAD Sentaurus and the application of kinetic Monte Carlo simulation to ultrashallow junction formation.
Please fill out the registration form to download a PDF of this TCAD Newsletter issue.
Please register with your official email ID (company or university). Other commercial email IDs (yahoo, gmail, etc.) will not be accepted.