Transistor Evolution from 90nm to 15nm
Analysis of the transistor evolution happening in the industry over the last several technology nodes reveals that despite the on-schedule chip area scaling, there has been a crisis in transistor scaling. In leading edge technology, the critical transistor size did not change all the way from 90nm to 20nm nodes. The underlying physical mechanisms explain why it is happening and point to the upcoming changes in transistor architecture that will enable transistor shrinking to resume. The scaling crisis is responsible for the slower than anticipated variability increase and for the stress engineering taking over the driverís seat in the performance race. A change in the transistor architecture at 15nm node will change the balance of major variability mechanisms and some of the lithography requirements and design rules. It will also open the door for introduction of non-silicon transistors built on top of a silicon wafer. Comparative analysis of a planar bulk MOSFET with FDSOI MOSFET and a FinFET shows their pros and cons and suggest their likely roles in the future.
Dr. Victor Moroz, Synopsys