This Sentaurus TCAD project provides a template setup for the simulation of DC characteristics of GaN HFET devices. Special attention is given to the automatic assignment of polarization charges at interfaces where polarization vectors experience large divergence. Examples of bulk and interface trap placement are given and proper models are selected for the simulation of III-nitride devices. Changes to the numeric accuracy settings are required to simulate large band-gap materials such as GaN and AlGaN. An IdVds curve for Vd = 0 V and an IdVds curve for Vd = 10 V are simulated.
Cross section of simulated device structure.
Simulated Id versus Vgs curve for Vds = 10 V
The simulation project is part of the Sentaurus TCAD distribution at:
If you are interested in accessing this Application Example, please fill out the Example Request Form and you will be emailed download instructions.