Webinars 

Micron Case Study: Electrical Modeling of 3D-IC Through-Silicon Vias Using HSPICE
Learn how to effectively model the impact of TSVs on signal and power delivery, especially for high-speed applications.
Fuad Badrieh, Ph.D., Principal Engineer, Micron Technology; Hany Elhak, Product Marketing Manager, Synopsys
Jul 10, 2013
 
New Features and Updates: Sentaurus TCAD (H-2013.03)
Learn about the new features and enhancements in our H-2013.03 release of Sentaurus TCAD products . Continuing with our effort to enable modeling of technologies at the cutting edge of both, More-Moore and More-than-Moore technologies, we have recently introduced new features and model enhancements for FinFETs and alternative channel transistors, high power wide-band-gap devices and opto-electronics.
Karim El Sayed, Director, TCAD R&D, Synopsys; Sudarshan Krishnamoorthy, TCAD Technical Marketing Manager, Synopsys
Apr 30, 2013
 
Double Patterning Ready Extraction and Signoff: TSMC and Synopsys Update
Learn how double patterning technology (DPT) has emerged as a critical technique to ensure printability of device and interconnects layers in IC manufacturing.
Anderson Chiu, Technical Manager, TSMC; Beifang Qiu, Senior R&D Manager, Synopsys
Dec 05, 2012
 
Double Patterning Ready Extraction and Signoff: TSMC - Simplified Mandarin
Learn how double patterning technology (DPT) has emerged as a critical technique to ensure printability of device and interconnects layers in IC manufacturing.
Anderson Chiu, Techincal Manager, TSMC; Beifang Qiu, Senior R&D Manager, Synopsys
Dec 05, 2012
 
Double Patterning Ready Extraction and Signoff: TSMC and Synopsys Update - Traditional Mandarin
Learn how double patterning technology (DPT) has emerged as a critical technique to ensure printability of device and interconnects layers in IC manufacturing.
Beifang Qiu, Technical Manager, Synopsys; Anderson Chiu, Senior R&D Manager, TSMC
Dec 05, 2012
 
Sentaurus TCAD G-2012.06 New Features and Updates
This webinar presents the new features and enhancements in the G-2012.06 release of Sentaurus TCAD.
Karim El Sayed, Director, TCAD R&D, Synopsys; Sudarshan Krishnamoorthy, TCAD Technical Marketing Manager, Synopsys
Sep 20, 2012
 
Enabling 3D-IC Integration
Hear how Xilinx is using SSI technology to deliver higher levels of integration and flexibility in FPGA products, and learn how Synopsys' silicon-proven tools are enabling 3D-IC integration.
Steve Smith, Senior Director, 3D-IC Strategy and Marketing, Synopsys; Shankar Lakka, Director of IC Design, Full-Chip FPGA Integration Group, Xilinx
Jul 18, 2012
 
Design and Analysis of ESD Protection Structures with Sentaurus TCAD
Hear Synopsys discuss the physical modeling of ESD structures, with a focus on the underlying physical mechanisms that limit protection, and illustrate the TCAD ESD design methodology in a 32nm bulk C
Chan-Su Yun, Senior Staff R&D Engineer, Synopsys; Sudarshan Krishnamoorthy, Technical Marketing Mgr, Synopsys
Apr 11, 2012
 
New Features in TCAD Sentaurus: September 2011 Release
The latest release delivers new capabilities in advanced structure generation, new models in process and device simulation and new methods for modeling semiconductor device variability.
Karim El Sayed, Director, TCAD R&D, Synopsys; Sudarshan Krishnamoorthy, TCAD Technical Marketing Manager, Synopsys
Oct 06, 2011
 
Modeling Semiconductor Device Variability with TCAD Sentaurus
Learn a methodology for variability analysis at the technology level combining 3D process simulation with a device simulation technique known as Impedance Field Method.
Karim El Sayed, Director, TCAD R&D, Synopsys
Jun 01, 2011
 
Modeling Semiconductor Reliability with TCAD Sentaurus
Learn how TCAD simulation can provide insight into underlying degradation mechanisms and can guide process changes to improve semiconductor reliability.
Nelson Braga, CAE Manager, Synopsys; Xiaopeng Xu, R&D Manager, Synopsys; Ilya Rumyantsev, R&D Engineer, Synopsys
Mar 30, 2011
 
New Features in TCAD Sentaurus: December 2010 Release
Introduction to new features in the December 2010 release of TCAD Sentaurus. Learn about Sentaurus' new capabilities in 3D structure generation, process modeling, quantization in device physics, variability modeling and optoelectronics.
Karim El Sayed, Director, Synopsys TCAD R&D
Jan 18, 2011
 
Simulation of Power Devices with TCAD Sentaurus
A complete review of TCAD simulation of power devices from the latest trends to future outlook, including silicon-based, SiC & GaN power devices. (Japanese/English)
Ricardo Borges, Sr. Manager, TCAD Product Marketing, Synopsys
Jul 30, 2010
 
Introduction to TCAD Sentaurus: March 2010 Release
Introduction to the latest release of TCAD Sentaurus including new features and capabilities for addressing technologies such as CMOS, memory, power, analog/RF and optoelectronics.
Sudarshan Krishnamoorthy, Technical Marketing Manager, Synopsys; Christoph Zechner, R&D Manager, Synopsys; Nelson Braga, CAE Manager, Synopsys; Dmitri Matveev, R&D Engineer, Synopsys
Apr 27, 2010
 
3-D TCAD Simulation with Sentaurus
The latest algorithms and best practices for 3-D TCAD simulation to derive maximum benefit from the comprehensive 3-D capabilities in Sentaurus TCAD.
Sudarshan Krishnamoorthy, Technical Marketing Manager, Synopsys; Simeon Simeonov, Ph.D., R&D Manager, Synopsys
Feb 24, 2010
 
Simulation of Advanced Semiconductor Devices Including High-k/Metal-gate Transistors and FinFETs
This webinar discusses the application of TCAD to high-k/metal-gate transistors and 3-D modeling FinFET devices, focusing on the physical models and 3-D modeling techniques required to achieve successful simulations.
Synopsys
Dec 01, 2009
 
Simulation of Multi-Junction Solar Cells Using TCAD Sentaurus
This webinar addresses the design and optimization of multi-junction solar cells using Synopsys' TCAD Sentaurus tools.
Synopsys
Apr 15, 2009
 
Thin Film Solar Cell Simulation
Thin film solar cells are currently the focus of worldwide research and development efforts aimed at bringing to market more efficient and cost effective processes and designs.
Synopsys
Aug 20, 2008
 
Modeling Non-volatile Memory Technologies with Sentaurus TCAD
A new generation of non-volatile memory devices have kept scientists and designers busy researching and optimizing designs like SONOS memory, new materials like chalcogenide (GST) for Phase Change Memory, or means to pump charge into Nano Crystals to store information.
Synopsys
May 29, 2008
 
Gallium Nitride HFETs: Physical Models and Simulations for RF and Power Applications
This webinar concentrates on simulation of GaN HFET devices using TCAD Sentaurus Device including treatment of spontaneous and piezoelectric polarization effects, numerical accuracy settings, assignment of bulk and interface traps, and selection of mobility and transport models.
Synopsys
Feb 21, 2008
 


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