Overview
Silicon carbide (SiC) has long been recognized as a promising semiconductor for power electronics in view of its superior material attributes, allowing the realization of higher blocking voltages and switching frequencies in combination with excellent thermal conductivity. Recently, advances in the availability of large diameter SiC wafers with reduced micropipe defect counts and novel processing techniques have incited development efforts to bring new SiC devices to market, including Schottky rectifiers, vertical JFETs, and power MOSFETs. As with other semiconductor technologies, TCAD simulation is an important tool to help engineers design and optimize the device structures. However, successful simulation of SiC devices requires special considerations in the numerical methods used because of the very low intrinsic carrier concentrations characteristic of wide bandgap materials. Moreover, as new experimental results are reported, it is important to ensure a consistent set of model parameters is used. This webcast discusses best practices for robust SiC device simulation and presents the calibration of model parameters to experimental data.

Who Should Attend?
Process, device and TCAD engineers working in SiC device technologies for power and RF applications.

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