Overview
The rising complexity in the processing steps and device structures of semiconductor technologies is leading to a corresponding rise in 3D effects which must be analyzed with simulation. Notable examples include narrow-width MOSFETs and multi-gate devices in advanced CMOS, floating-control gate capacitive coupling in non-volatile memory, crosstalk in CMOS image sensor pixels, and superjunction MOSFETs and IGBTs power devices. Fortunately, this increased motivation for 3D TCAD simulation has coincided with a widespread availability and affordability of high-performance 64-bit computing platforms combining large amounts of physical memory with multi-core processors which, when paired with recent advances in numerical algorithms and parallelization, enable complex 3D simulations today that would have been impractical just a few years ago. This webcast addresses ways to make 3D simulations more efficient with discussions on structure definition, mesh generation and numerical solver settings.

Who Should Attend?
Process, device and TCAD engineers and managers interested in simulating 3D effects in applications such as power devices, memory, CMOS, and image sensors.

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