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Thank you for attending! Synopsys Technical Forum Please select a presentation below to download. You will be asked to complete a short registration for the download to begin. Synopsys Technical Program at SPIE Advanced Lithography Please select a paper below to download. You will be asked to complete a short registration for the download to begin.  3D resist profile modeling for OPC applications
Paper 8683-43
Author(s): Yongfa Fan, Synopsys, Inc. (United States); Koh K. Kit, Globalfoundries (China); Qing Yang, ; Wolfgang Hoppe, Bernd Kuechler, Synopsys GmbH (Germany); Puvan Perampalam, ; Makoto Miyagi, Synopsys, Inc. (United States); Thomas Schmöller, Synopsys GmbH (Germany)- 7nm node EUV predictive study of mask LER transference to CD variance
Paper 8679-97
Authors: Deniz Civay, Thomas I. Wallow, Yuansheng Ma, Harry J. Levinson, GLOBALFOUNDRIES Inc. (United States); Joachim Siebert, Eva Nash, Ulrich K. Klostermann, Synopsys GmbH (Germany) - Avoiding wafer-print artifacts in spacer is dielectric (SID) patterning
Paper 8683-37
Authors: Gerard Luk-Pat, Benjamin D. Painter, Alexander Miloslavsky, Synopsys, Inc. (United States); Peter De Bisschop, IMEC (Belgium); Adam Beacham, Synopsys, Inc. (Canada); Kevin Lucas, Synopsys, Inc. (United States) - Compact OPC model optimization using emulated data
Paper 8683-30
Authors: Artak Isoyan, Synopsys, Inc. (United States); Thomas Mülders, Synopsys GmbH (Germany); Lawrence S. Melvin III, Synopsys, Inc. (United States) - Design-based metrology for development and manufacturing applications
Paper 8681-110
Authors: Peter D. Brooker, Synopsys, Inc. (United States); Shimon Levi, Applied Materials (Israel); Sylvain Berthiaume, Synopsys, Inc. (Canada); William A. Stanton, Travis Brist, Synopsys, Inc. (United States) - Evaluation of cost-driven triple-patterning lithography decomposition
Paper 8684-7
Authors: Haitong Tian, Univ. of Illinois at Urbana-Champaign (United States); Hongbo Zhang, Synopsys, Inc. (United States); Martin D. F. Wong, Univ. of Illinois at Urbana-Champaign (United States) - The impact of realistic source shape and flexibility on source-mask optimization (Coming Soon)
Paper 8683-22
Authors: Hajime Aoyama, Yasushi Mizuno, Noriyuki Hirayanagi, Nikon Corp. (Japan); Hiro Izumi, Keiichi Tajima, Nihon Synopsys G.K. (Japan); Joachim Siebert, Wolfgang Demmerle, Synopsys GmbH (Germany); Tomoyuki Matsuyama, Nikon Corp. (Japan) - Improved SADP decomposition for SID process with model-based verification
Paper 8684-13
Authors: Yuelin Du, Univ. of Illinois at Urbana-Champaign (United States) and Synopsys, Inc. (United States); Hua Song, James P. Shiely, Synopsys, Inc. (United States); Martin D. F. Wong, Univ. of Illinois at Urbana-Champaign (United States) - Mask compensation for process flare in 193nm very low-K1 lithography
Paper 8683-15
Authors: Jeonkyu Lee, Taehyeong Lee, Chunsoo Kang, Jungchan Kim, Jaeseung Choi, Chan-Ha Park, Hyun-Jo Yang, Dong Gyu Yim, SK Hynix, Inc. (Korea, Republic of); Jung-Hoe Choi, Synopsys Korea Inc. (Korea, Republic of); Irene Su, Synopsys Taiwan Ltd. (Taiwan); Hua Song, Synopsys, Inc. (United States); Mun-hoi Do, Synopsys Korea Inc. (Korea, Republic of); Yongfa Fan, Anthony C. Wang, Synopsys, Inc. (United States); Sung-Woo Lee, Synopsys Korea Inc. (Korea, Republic of); Kevin Lucas, Synopsys, Inc. (United States) - Role of 3D photoresist simulation for advanced technology nodes
Paper 8683-49
Authors: Aravind Narayana Samy, Rolf Seltmann, Frank Kahlenberg, Jessy Schramm, GLOBALFOUNDRIES Dresden Module Two, GmbH& Co. KG (Germany); Bernd Kuechler, Ulrich K. Klostermann, Synopsys GmbH (Germany) - Triple patterning with polygon stitching: scalability and compliance for metal 1 at the 14nm node
Paper 8683-7
Authors: Christopher M. Cork, Synopsys SARL (France); Alexander Miloslavsky, Yong Li, Kevin Lucas, Synopsys, Inc. (United States)
Copyright 2013 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
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