TCAD Webcast Series 2008 

Gallium Nitride HFETs: Physical Models and Simulations for RF and Power Applications 


Abstracts
GaN Heterostructure Field-Effect transistors (HFETs) are attracting considerable attention as high-power and high-frequency devices for radar, avionics and wireless base-station transmitters, thanks to the unique material properties of III-N material system. This webcast concentrates on simulation of GaN HFET devices using TCAD Sentaurus Device including treatment of spontaneous and piezoelectric polarization effects, numerical accuracy settings, assignment of bulk and interface traps, and selection of mobility and transport models. The models are then applied to DC, RF and reliability simulations to illustrate the growing application of TCAD to this fast-rising class of devices.

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