Sentaurus Device 

An advanced multidimensional (1D/2D/3D) device simulator  

Overview
Sentaurus Device is an advanced multidimensional device simulator capable of simulating electrical, thermal, and optical characteristics of silicon-based and compound semiconductor devices. Sentaurus Device is a new-generation device simulator for designing and optimizing current and future semiconductor devices.

Features
Sentaurus Device is a general purpose device simulation tool which offers simulation capability in the following broad categories:

Advanced Logic Technologies Sentaurus Device simulates advanced logic technologies such as FinFET and FDSOI, including stress engineering, channel quantization effects, hot carrier effects and ballistic transport and many other advanced transport phenomena. Sentaurus Device also supports the modeling of SiGe, SiSn, InGaAs, InSb and other high mobility channel materials and implements highly efficient methods for modeling atomistic and process variability effects.

Compound Semiconductor Technologies: Sentaurus Device can simulate advanced quantization models including rigorous Schrödinger solution and complex tunneling mechanisms for transport of carriers in heterostructure devices like HEMTs and HBTs made from, but not limited to, GaAs, InP, GaN, SiGe, SiC, AlGaAs, InGaAs, AlGaN and InGaN.

Optoelectronic Devices: Sentaurus Device has the capability to simulate the optoelectronic characteristics of semiconductor devices like CMOS image sensors and solar cells. Options within Sentaurus Device also allow for rigorous solution of the Maxwell's wave equation using FDTD methods.

Power Electronic Devices: Sentaurus Device is the most flexible and advanced platform for simulating electrical and thermal effects in a wide range of power devices such as IGBT, power MOS, LDMOS, thyristors, and high-frequency high-power devices made from wide band-gap material like GaN and SiC.

Memory Devices: With advanced carrier tunneling models for gate leakage and trapping de-trapping models, Sentaurus Device can simulate any floating gate device like SONOS and flash memory devices including devices using high-K dielectric.

Radiation Effects: The impact of radiation on semiconductor device operations can be studied with Sentaurus Device. Both single event effects, which include single event upset (SEU) and single event transient (SET), and total ionization dose (TID) effects can be simulated.

Novel Semiconductor Technologies: Advanced physics and the ability to add user-defined models in Sentaurus Device allow for investigation of novel structures made from new material.

Benefits
  • Explore new device concepts for which fabrication processes are not yet defined
  • Characterize electrical, thermal and optical behavior of semiconductor devices for fast prototyping, development and optimization of their performance
  • Shorten development time by supplementing experimental data with deep physical insight from simulation
  • Study sensitivity of device characteristics to process variation for optimizing parametric yields



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