HX5000 Design Flow and Infrastructure 

Honeywell and Synopsys Enable Next Generation Rad-Hard ASICs 

Radiation-hardened application specific integrated circuits (ASICs) can now achieve extremely high gate counts and speeds through the combination of a specially targeted siliconon- insulator (SOI) semiconductor fabrication technology with a very deep submicron (VDSM) design flow. Through a portfolio of collaborative ASIC design and manufacturing services from Honeywell and Synopsys, military and aerospace (mil/aero) developers can achieve gate counts as high as 12-million gates or more utilizing a 150-nanometer (nm) rad-hard manufacturing process. Honeywell and Synopsys have developed a unique collaborative design flow that enables efficient implementation of custom designs into HX5000 ASICs. The optimized design flow provides the industry's most comprehensive development capability for radiation-hardened (Rad-Hard) and radiationtolerant (Rad-Tolerant) ASICs.

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