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A Silicon Interposer-based 2.5D-IC Design Flow, Going 3D by Evolution Rather Than by Revolution Dr. Michael Jackson, VP of R&D and Physical Implementation at Synopsys ponders the 3D-IC technology trends, their timeline, and the impact on EDA, proposing that a silicon interposer-based 2.5D-IC design flow is well within our reach.

This edition of TCAD News is dedicated to the F-2011.09 release of TCAD Sentaurus which supports the latest processes (plasma implantation, silicon stress and orientation-dependent mobility), modeling 3D structures (shapes library, crystallographic etch and deposition, line-edge roughness, Sentaurus Topography 3D interface), and simulating device variability with the Impedance Field Method.

This edition presents two articles. The first article examines the manufacturing, reliability, and performance analysis of 3D integration structures using through-silicon vias (TSVs), with the simulations performed using Fammos TX. The second article presents the simulation of GaAs-based heterojunction bipolar transistors (HBTs) and pseudomorphic high electron mobility transistors (PHEMTs).

This edition of TCAD News is dedicated to the F-2011.09 release of TCAD Sentaurus which supports the latest processes (plasma implantation, silicon stress and orientation-dependent mobility), modeling 3D structures (shapes library, crystallographic etch and deposition, line-edge roughness, Sentaurus Topography 3D interface), and simulating device variability with the Impedance Field Method.