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Introduction to TCAD Sentaurus New Release Features
New features in the June 2009 release.

Simulation of Multi-Junction Solar Cells Using TCAD Sentaurus
Design and optimization of multi-junction solar cells using the TCAD Sentaurus tools.

Thermo Mechanical Finite Element Analysis of 3D Through-silicon Via (TSV) Structures
3D integration is considered by many to offer significant performance and cost benefits for key applications.

CMOS Flow from Process to Device to Yield Management with Process Compact Models (PCMs)
Yield and performance are concerns for device design, and a clear understanding of their sensitivity to process parameters is key for better control.

Addressing the Challenges in EUV Lithography by Simulation
EUV lithography is a viable solution for printing the critical features related to the 22nm technology node

Thin Film Solar Cell Simulation
Learn more about efforts aimed at bringing to market more efficient and cost effective processes and designs.

Simulation of SiC Devices – Models and Techniques
SiC offers superior material attributes and allows higher blocking voltages and switching frequencies.

3D Process and Device Simulation - Practical Guidelines
Rising complexity in processing steps and device structures is leading to a corresponding rise in 3D effects.

Modeling Non-volatile Memory Technologies with Sentaurus TCAD
Addressing a new generation of non-volatile memory devices like SONOS memory, new materials like chalcogenide (GST) for Phase Change Memory, or means to pump charge into Nano Crystals to store information.

Resist Modeling with Sentaurus Lithography
An introduction to lithography simulation and the benefits of TCAD Sentaurus Lithography.

Electromagnetic Simulation of Image Sensors: From Design to Manufacturability
In BEoL processing, high mechanical stresses and large stress gradients in local regions of interconnect structures can lead to yield loss and reliability failures.

Gallium Nitride HFETs: Physical Models and Simulations for RF and Power Applications
In BEoL processing, high mechanical stresses and large stress gradients in local regions of interconnect structures can lead to yield loss and reliability failures.

Process and Stress Simulation for BEoL Reliability and Mobility Enhancement
In BEoL processing, high mechanical stresses and large stress gradients in local regions of interconnect structures can lead to yield loss and reliability failures.



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